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We explore mechanisms of orbital order decay in doped Mott insulators$R_{1-x}$(Sr,Ca)$_x$VO$_3$ ($R=\,$Pr,Y,La) caused by charged (Sr,Ca) defects.Our unrestricted Hartree-Fock analysis focuses on the combined effect ofrandom, charged impurities and associated doped holes up to $x=0.5$. The studyis based on a generalized multi-band Hubbard model for the relevant vanadium$t_{2g}$ electrons, and includes the long-range (i) Coulomb potentials ofdefects and (ii) electron-electron interactions. We show that the rotation ofoccupied $t_{2g}$ orbitals, induced by the electric field of defects, is a veryefficient perturbation that largely controls the suppression of orbital orderin these compounds. We investigate the inverse participation number spectra andfind that electron states remain localized on few sites even in the regimewhere orbital order is collapsed. From the change of kinetic and superexchangeenergy we can conclude that the motion of doped holes, which is the dominanteffect for the reduction of magnetic order in high-$T_c$ compounds, is ofsecondary importance here.

Defect-induced orbital polarization and collapse of orbital order in doped vanadium perovskites