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Electrolyte gating is a powerful means for tuning the carrier density andexploring the resultant modulation of novel properties on solid surfaces.However, the mechanism, especially its effect on the oxygen migration andelectrostatic charging at the oxide heterostructures, is still unclear. Here weexplore the electrolyte gating on oxygen-deficient interfaces between SrTiO3(STO) crystals and LaAlO3 (LAO) overlayer through the measurements ofelectrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence(PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively andirreversibly after gating due to oxygen electromigration at the amorphousLAO/STO interface, resulting in a reconstruction of its interfacial bandstructure. Because of the filling of Ovac, the amorphous interface also showedan enhanced electron mobility and quantum oscillation of the conductance.Further, the filling effect could be controlled by the degree of thecrystallinity of the LAO overlayer by varying the growth temperatures. Ourresults reveal the different effects induced by electrolyte gating, providingfurther clues to understand the mechanism of electrolyte gating on buriedinterfaces and also opening a new avenue for constructing high-mobility oxideinterfaces.

Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces