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We demonstrate strong anisotropic spin-orbit interaction (SOI) in grapheneinduced by monolayer WS$_2$. Direct comparison between graphene/monolayerWS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements revealsthat monolayer transition metal dichalcogenide (TMD) can induce much strongerSOI than bulk. Detailed theoretical analysis of the weak-antilocalizationcurves gives an estimated spin-orbit energy ($E_{\rm so}$) higher than 10 meV.The symmetry of the induced SOI is also discussed, and the dominant $z$$\rightarrow$ $-z$ symmetric SOI can only explain the experimental results.Spin relaxation by the Elliot-Yafet (EY) mechanism and anomalous resistanceincrease with temperature close to the Dirac point indicates Kane-Mele (KM) SOIinduced in graphene.

Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS$_2$