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The lattice response of a prototype Mott insulator, SmTiO3, to hole doping isinvestigated with atomic-scale spatial resolution. SmTiO3 films are doped withSr on the Sm site with concentrations that span the insulating and metallicsides of the filling-controlled Mott metal-insulator transition (MIT). TheGdFeO3-type distortions are investigated using an atomic resolution scanningtransmission electron microscopy technique that can resolve small latticedistortions with picometer precision. We show that these distortions aregradually and uniformly reduced as the Sr concentration is increased withoutany phase separation. Significant distortions persist into the metallic state.The results present a new picture of the physics of this prototypefilling-controlled MIT, which is discussed.

Response of the lattice across the filling-controlled Mott metal-insulator transition of a rare earth titanate