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Semiconductor microcavities in the strong-coupling regime exhibit an energyscale in the THz frequency range, which is fixed by the Rabi splitting betweenthe upper and lower exciton-polariton states. While this range can be tuned byseveral orders of magnitude using different excitonic medium, the transitionbetween both polaritonic states is dipole forbidden. In this work we show thatin Cadmium Telluride microcavities, the Rabi-oscillation driven THz radiationis actually active without the need for any change in the microcavity design.This feature results from the unique resonance condition which is achievedbetween the Rabi splitting and the phonon-polariton states, and leads to agiant enhancement of the second order nonlinearity.

Phonon mediated conversion of exciton-polaritons Rabi oscillation into THz radiation