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We demonstrate optical spin polarization of the neutrally-chargedsilicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect whichemits with a zero-phonon line at 946 nm. The spin polarization is found to bemost efficient under resonant excitation, but non-zero at below-resonantenergies. We measure an ensemble spin coherence time $T_2>100~\mathrm{\mu s}$at low-temperature, and a spin relaxation limit of $T_1>25~\mathrm{s}$. Opticalspin state initialization around 946 nm allows independent initialization of$\mathrm{SiV^{0}}$ and $\mathrm{NV^{-}}$ within the same optically-addressedvolume, and $\mathrm{SiV^{0}}$ emits within the telecoms downconversion band to1550 nm: when combined with its high Debye-Waller factor, our initial resultssuggest that $\mathrm{SiV^{0}}$ is a promising candidate for a long-rangequantum communication technology.

The neutral silicon-vacancy center in diamond: spin polarization and lifetimes