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Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy ofelectrically tunable, Coulombic free-carrier and excitonic many-body phenomena.Investigating the fundamental interactions underpinning these phenomena -critical to both many-body physics exploration and device applications -presents challenges, however, due to a complex balance of competingoptoelectronic effects and interdependent properties. Here, optical detectionof bound- and free-carrier photoexcitations is used to directly quantifycarrier-induced changes of the quasiparticle band gap and exciton bindingenergies. The results explicitly disentangle the competing effects andhighlight longstanding theoretical predictions of large carrier-induced bandgap and exciton renormalization in 2D semiconductors.

Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2