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Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare butimportant as a versatile platform for exploring exotic electronic propertiesand topological phase transitions. A quintessential feature of TDSs is 3D Diracfermions associated with bulk electronic states near the Fermi level. Usingangle-resolved photoemission spectroscopy (ARPES), we have observed such bulkDirac cones in epitaxially-grown {\alpha}-Sn films on InSb(111), the first suchTDS system realized in an elemental form. First-principles calculations confirmthat epitaxial strain is key to the formation of the TDS phase. A phase diagramis established that connects the 3D TDS phase through a singular point of azero-gap semimetal phase to a topological insulator (TI) phase. The nature ofthe Dirac cone crosses over from 3D to 2D as the film thickness is reduced.

Elemental topological Dirac semimetal: {\alpha}-Sn on InSb(111)