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The magnetic order in antiferromagnetic (AF) materials is hard to controlwith external magnetic fields. However, recent advances in detecting andmanipulating AF order electrically have opened up new prospects for thesematerials in basic and applied spintronics research. Using x-ray magneticlinear dichroism microscopy, we show here that staggered effective fieldsgenerated by electrical current can induce reproducible and reversiblemodification of the antiferromagnetic domain structure in microdevicesfabricated from a tetragonal CuMnAs thin film. The current-induced domainswitching is inhomogeneous at the submicron level. A clear correlation betweenthe average domain orientation and the anisotropy of the electrical resistanceis demonstrated.

Imaging current-induced switching of antiferromagnetic domains in CuMnAs