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The low energy band structure of graphene has two inequivalent valleys at Kand K' points of the Brillouin zone. The possibility to manipulate this valleydegree of freedom defines the field of valleytronics, the valley analogue ofspintronics. A key requirement for valleytronic devices is the ability to breakthe valley degeneracy by filtering and spatially splitting valleys to generatevalley polarized currents. Here we suggest a way to obtain valley polarizationusing strain-induced inhomogeneous pseudomagnetic fields (PMF) which actdifferently on the two valleys. Notably, the suggested method does not involveexternal magnetic fields, or magnetic materials, as previous proposals.  In our proposal the strain is due to experimentally feasible nanobubbles (butany local deformation would do): the associated PMFs lead to different realspace trajectories for K and K' electrons, thus allowing the two valleys to beaddressed individually. In this way, graphene nanobubbles can be exploited inboth valley filtering and valley splitting devices, and our simulations revealthat a number of different functionalities are possible depending on thedeformation field.

Graphene Nanobubbles as Valley Filters and Beamsplitters