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The complex electronic properties of $\mathrm{ZrTe_5}$ have recentlystimulated in-depth investigations that assigned this material to either atopological insulator or a 3D Dirac semimetal phase. Here we report acomprehensive experimental and theoretical study of both electronic andstructural properties of $\mathrm{ZrTe_5}$, revealing that the bulk material isa strong topological insulator (STI). By means of angle-resolved photoelectronspectroscopy, we identify at the top of the valence band both a surface and abulk state. The dispersion of these bands is well captured by ab initiocalculations for the STI case, for the specific interlayer distance measured inour x-ray diffraction study. Furthermore, these findings are supported byscanning tunneling spectroscopy revealing the metallic character of the samplesurface, thus confirming the strong topological nature of $\mathrm{ZrTe_5}$.

Evidence for a Strong Topological Insulator Phase in $\mathrm{ZrTe_5}$