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Interface structure at polar/non-polar interfaces has been shown to be a keyfactor in controlling emergent behavior in oxide heterostructures, includingthe LaFeO$_3$/$\textit{n}$-SrTiO$_3$ system. We demonstrate via high energyresolution x-ray photoemission that epitaxial LaFeO$_3$/$\textit{n}$-SrTiO$_3$(001) heterojunctions engineered to have opposite interface polarities exhibitvery similar band offsets and potential gradients within the LaFeO$_3$ films.However, differences in the potential gradient within the SrTiO$_3$ layerdepending on polarity may promote hole diffusion into LaFeO$_3$ forapplications in photocatalysis.

Interface structure, band alignment and built-in potentials at LaFeO$_3$/$\textit{n}$-SrTiO$_3$ heterojunctions