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We report simultaneous transport and scanning microwave impedance microscopyto examine the correlation between transport quantization and filling of thebulk Landau levels in the quantum Hall regime in gated graphene devices.Surprisingly, a comparison of these measurements reveals that quantizedtransport typically occurs below the complete filling of bulk Landau levels,when the bulk is still conductive. This result points to a revisedunderstanding of transport quantization when carriers are accumulated bygating. We discuss the implications on transport study of the quantum Halleffect in graphene and related topological states in other two-dimensionalelectron systems.

Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices