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While being extensively studied as an important physical process to alterexciton population in nanostructures at fs time scale, carrier multiplicationhas not been considered seriously as a major mechanism for phase transition.Real-time time-dependent density functional theory study of Ge2Sb2Te5 revealsthat carrier multiplication can induce ultrafast phase transition in solidstate despite that the lattice remains cold. The results also unify theexperimental findings in other semiconductors for which the explanation remainsto be the 30-year old phenomenological plasma annealing model.

Carrier Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Non-Thermal Phase Transition in Semiconductors