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A Corbino ring geometry is utilized to analyze edge and bulk conductance ofInAs/GaSb quantum well structures. We show that edge conductance exists in thetrivial regime of this theoretically-predicted topological system with atemperature insensitive linear resistivity per unit length in the range of 2kOhm/um. A resistor network model of the device is developed to decouple theedge conductance from the bulk conductance, providing a quantitative techniqueto further investigate the nature of this trivial edge conductance,conclusively identified here as being of n-type.

Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry