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We report on magneto-transport studies of dual-gated, Bernal-stacked trilayergraphene (TLG) encapsulated in boron nitride crystals. We observe a quantumHall effect staircase which indicates a complete lifting of the twelve-folddegeneracy of the zeroth Landau level. As a function of perpendicular electricfield, our data exhibits a sequence of phase transitions between all integerquantum Hall states in the filling factor interval $-8<\nu<0$. We develop atheoretical model and argue that, in contrast to monolayer and bilayergraphene, the observed Landau level splittings and quantum Hall phasetransitions can be understood within a single-particle picture, but imply thepresence of a charge density imbalance between the inner and outer layers ofTLG, even at charge neutrality and zero transverse electric field. Our resultsindicate the importance of a previously unaccounted band structure parameterwhich, together with a more accurate estimate of the other tight-bindingparameters, results in a significantly improved determination of the electronicand Landau level structure of TLG.

Landau level splittings, phase transitions, and non-uniform charge distribution in trilayer graphene