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The metal-to-insulator transition in BaTiO_{3} is investigated using electrostatic doping, which avoids effects from disorder and strain that would accompany chemical doping. SmTiO_{3}/BaTiO_{3}/SrTiO_{3} heterostructures are doped with a constant sheet carrier density of 3×10^{14}  cm^{-2} that is introduced via the polar SmTiO_{3}/BaTiO_{3} interface. Below a critical BaTiO_{3} thickness, the structures exhibit metallic behavior with high carrier mobilities at low temperatures, similar to SmTiO_{3}/SrTiO_{3} interfaces. Above this thickness, data indicate that the BaTiO_{3} layer becomes ferroelectric. The BaTiO_{3} lattice parameters increase to a value consistent with a strained, tetragonal unit cell, the structures are insulating below ∼125  K, and the mobility drops by more than an order of magnitude, indicating self-trapping of carriers. The results shed light on the interplay between charge carriers and ferroelectricity.

physical review letters

Probing the Metal-Insulator Transition in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>BaTiO</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>by Electrostatic Doping

Probing the Metal-Insulator Transition inBaTiO3by Electrostatic Doping