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The growth of Pb on Si(111)-(7×7) at temperatures from 72 to 201 K has been investigated using in situ electrical resistivity measurements and scanning tunneling microscopy. For temperatures T>140  K the specific resistivity ρ(θ) versus coverage θ shows an unusual "hump," instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height eight-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivity dependence on θ.

physical review letters

Correlations between<i>In Situ</i>Conductivity and Uniform-Height Epitaxial Morphology in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Pb</mml:mi><mml:mo>/</mml:mo><mml:mi>Si</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn mathvariant="bold">1</mml:mn><mml:mn mathvariant="bold">1</mml:mn><mml:mn mathvariant="bold">1</mml:mn><mml:mo stretchy="false">)</mml:mo><mml:mtext>−</mml:mtext><mml:mo stretchy="false">(</mml:mo><mml:mn mathvariant="bold">7</…

Correlations betweenIn SituConductivity and Uniform-Height Epitaxial Morphology inPb/Si(111)−(7