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In contrast to bulk FeSe superconductor, heavily electron-doped FeSe-derivedsuperconductors show relatively high Tc without hole Fermi surfaces and nodalsuperconducting gap structure, which pose great challenges on pairing theoriesin the iron-based superconductors. In the heavily electron-doped FeSe-basedsuperconductors, the dominant factors and the exact working mechanism that isresponsible for the high Tc need to be clarified. In particular, a cleancontrol of carrier concentration remains to be a challenge for revealing howsuperconductivity and Fermi surface topology evolves with carrier concentrationin bulk FeSe. Here, we report the evolution of superconductivity in the FeSethin flake with systematically regulated carrier concentrations byliquid-gating technique. High-temperature superconductivity at 48 K can beachieved only with electron doping tuned by gate voltage in FeSe thin flakewith Tc less than 10 K. This is the first time to achieve such a hightemperature superconductivity in FeSe without either epitaxial interface orexternal pressure. It definitely proves that the simple electron-doping processis able to induce high-temperature superconductivity with Tc as high as 48 K inbulk FeSe. Intriguingly, our data also indicates that the superconductivity issuddenly changed from low-Tc phase to high-Tc phase with a Lifshitz transitionat certain carrier concentration. These results help us to build a unifiedpicture to understand the high-temperature superconductivity among allFeSe-derived superconductors and shed light on further pursuit of higher Tc inthese materials.

Evolution of high-temperature superconductivity from low-Tc phase tuned by carrier concentration in FeSe thin flakes