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We report the first application of critical cluster techniques to the Mottmetal-insulator transition in vanadium dioxide. We show that the geometricproperties of the metallic and insulating puddles observed by scanningnear-field infrared microscopy are consistent with the system passing nearcriticality of the random field Ising model as temperature is varied. Theresulting large barriers to equilibrium may be the source of the unusuallyrobust hysteresis phenomena associated with the metal-insulator transition inthis system.

Random Field Driven Spatial Complexity at the Mott Transition in VO2