English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We discovered uniaxial oriented centers in silicon carbide having unusualperformance. Here we demonstrate that the family of silicon-vacancy relatedcenters with $S= 3/2$ in rhombic 15R-SiC crystalline matrix possess uniquecharacteristics such as ODMR contrast and optical spin alignment existing attemperatures up to 250$^\circ$C. Thus the concept of optically addressablesilicon vacancy related centers with half integer ground spin state is extendedto the wide class of SiC rhombic polytypes. The structure of these centers,which is a fundamental problem for quantum applications, has been establishedusing high frequency ENDOR. It has been shown that a family of siliconvacancyrelated centers is a negatively charged silicon vacancy in the paramagneticstate with the spin $S= 3/2$, V$_\textrm{Si}^-$, perturbed by neutral carbonvacancy in non-paramagnetic state, V$_\textrm{C}^0$, having no covalent bondwith the silicon vacancy and located adjacently to the silicon vacancy on the ccrystal axis.

physical review letters

Optically addressable silicon vacancy-related spin centers in rhombic  silicon carbide with high breakdown characteristics and ENDOR evidence of  their structure