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While numerous methods have been proposed to produce semiconducting graphene,a significant bandgap has never been demonstrated. The reason is that,regardless of the theoretical gap formation mechanism, disorder at thesub-nanometer scale prevents the required chiral symmetry breaking necessary toopen a bandgap in graphene. In this work, we show for the first time that a 2Dsemiconducting graphene film can be made by epitaxial growth. Using improvedgrowth methods, we show by direct band measurements that a bandgap greater than0.5 eV can be produced in the first graphene layer grown on the SiC(0001)surface. This work demonstrates that order, a property that remains lacking inother graphene systems, is key to producing electronically viablesemiconducting graphene.

Semiconducting graphene from highly ordered substrate interactions