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Bulk and surface state contributions to the electrical resistance ofsingle-crystal samples of the topological Kondo insulator compound SmB6 areinvestigated as a function of crystal thickness and surface charge density, thelatter tuned by ionic liquid gating with electrodes patterned in a Corbino diskgeometry on a single surface. By separately tuning bulk and surface conductionchannels, we show conclusive evidence for a model with an insulating bulk andmetallic surface states, with a crossover temperature that depends solely onthe relative contributions of each conduction channel. The surface conductance,on the order of 100 e^2/h and electron-like, exhibits a field-effect mobilityof 133 cm^2/V/s and a large carrier density of ~2x10^{14}/cm^2, in goodagreement with recent photoemission results. With the ability to gate-modulatesurface conduction by more than 25%, this approach provides promise for bothfundamental and applied studies of gate-tuned devices structured on bulkcrystal samples.

Tuning bulk and surface conduction in topological Kondo insulator SmB6