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We demonstrate that magnetic properties of ultra-thin Co films adjacent toGd2O3 gate oxides can be directly manipulated by voltage. The Co films can bereversibly changed from an optimally-oxidized state with a strong perpendicularmagnetic anisotropy to a metallic state with an in-plane magnetic anisotropy,or to an oxidized state with nearly zero magnetization, depending on thepolarity and time duration of the applied electric fields. Consequently, anunprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm2has been realized in a nonvolatile manner using gate voltages of only a fewvolts. These results open a new route to achieve ultra-low energy magnetizationmanipulation in spintronic devices.

Reversible control of Co magnetism by voltage induced oxidation