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Injection of spins into semiconductors is essential for the integration ofthe spin functionality into conventional electronics. Insulating layers areoften inserted between ferromagnetic metals and semiconductors for obtaining anefficient spin injection, and it is therefore crucial to distinguish betweensignatures of electrical spin injection and impurity-driven effects in thetunnel barrier. Here we demonstrate an impurity-assisted tunnelingmagnetoresistance effect in nonmagnetic-insulator-nonmagnetic andferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effectreflects on/off switching of the tunneling current through impurity channels bythe external magnetic field. The reported effect, which is universal for anyimpurity-assisted tunneling process, finally clarifies the controversy of awidely used technique that employs the same ferromagnetic electrode to injectand detect spin accumulation.

Impurity-assisted tunneling magnetoresistance under weak magnetic field