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We report the experimental observation of Fabry-P\'erot (FP) interference inthe conductance of a gate-defined cavity in a dual-gated bilayer graphene (BLG)device. The high quality of the BLG flake, combined with the device'selectrical robustness provided by the encapsulation between two hexagonal boronnitride layers, allows us to observe ballistic phase-coherent transport througha $1${\mu}m-long cavity. We confirm the origin of the observed interferencepattern by comparing to tight-binding calculations accounting for thegate-tunable bandgap. The good agreement between experiment and theory, free oftuning parameters, further verifies that a gap opens in our device. The gap isshown to destroy the perfect reflection for electrons traversing the barrierwith normal incidence (anti-Klein tunneling). The broken anti-Klein tunnelingimplies that the Berry phase, which is found to vary with the gate voltages, isalways involved in the FP oscillations regardless of the magnetic field, insharp contrast with single-layer graphene.

Fabry-P\'erot interference in gapped bilayer graphene with broken anti-Klein tunneling