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Here we report the direct observation of single electron charging of a singleatomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanningtunneling microscope is placed adjacent to the DB to serve as a single electronsensitive charge-detector. Three distinct charge states of the dangling bond,positive, neutral, and negative, are discerned. Charge state probabilities areextracted from the data, and analysis of current traces reveals thecharacteristic single electron charging dynamics. Filling rates are found todecay exponentially with increasing tip-DB separation, but are not a functionof sample bias, while emptying rates show a very weak dependence on tipposition, but a strong dependence on sample bias, consistent with the notion ofan atomic quantum dot tunnel coupled to the tip on one side and the bulksilicon on the other.

Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface