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We report experimental evidence of a remarkable spontaneous time reversalsymmetry breaking in two dimensional electron systems formed by atomicallyconfined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si)and germanium (Ge). Weak localization corrections to the conductivity and theuniversal conductance fluctuations were both found to decrease rapidly withdecreasing doping in the Si:P and Ge:P $\delta-$layers, suggesting an effectdriven by Coulomb interactions. In-plane magnetotransport measurements indicatethe presence of intrinsic local spin fluctuations at low doping, providing amicroscopic mechanism for spontaneous lifting of the time reversal symmetry.Our experiments suggest the emergence of a new many-body quantum state when twodimensional electrons are confined to narrow half-filled impurity bands.

Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium