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We report on transport measurements of dual-gated, single-layer graphenedevices in the quantum Hall regime, allowing for independent control of thefilling factors in adjoining regions. Progress in device quality allows us tostudy scattering between edge states when the four-fold degeneracy of theLandau level is lifted by electron correlations, causing edge states to be spinand/or valley polarized. In this new regime, we observe a dramatic departurefrom the equilibration seen in more disordered devices: edge states withopposite spins propagate without mixing. As a result, the degree ofequilibration inferred from transport can reveal the spin polarization of theground state at each filling factor. In particular, the first Landau level isshown to be spin-polarized at half-filling, providing an independentconfirmation of a conclusion of Ref.[1]. The conductance in the bipolar regimeis strongly suppressed, indicating that co-propagating edge states, even withthe same spin, do not equilibrate along PN interfaces. We attribute thisbehavior to the formation of an insulating nu=0 stripe at the PN interface.

Selective equilibration of spin and valley polarized quantum Hall edge states in graphene