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Femtosecond relaxation of photo-excited quasiparticles in the one dimensionalMott insulator ET-F2TCNQ are measured as a function of external pressure, whichis used to tune the electronic structure. By fitting the static opticalproperties and measuring femtosecond decay times at each pressure value, wecorrelate the relaxation rates with the electronic bandwidth t and on theintersite correlation energy V. The scaling of relaxation times withmicroscopic parameters is different than for metals and semiconductors. Thecompetition between localization and delocalization of the Mott-Hubbard excitondictates the efficiency of the decay, as exposed by a fit based on the solutionof the time-dependent extended Hubbard Hamiltonian.

physical review letters

Pressure dependent relaxation in the photo-excited Mott insulator  ETF2TCNQ: Influence of hopping and correlations on quasiparticle  recombination rates