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We demonstrate theoretically that interface engineering can drive Germanium,one of the most commonly-used semiconductors, into topological insulatingphase. Utilizing giant electric fields generated by charge accumulation atGaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new designcan reduce the sizable gap in Ge and induce large spin-orbit interaction, whichlead to a topological insulator transition. Our work provides a new method onrealizing TI in commonly-used semiconductors and suggests a promising approachto integrate it in well developed semiconductor electronic devices.

Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells