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Strains strongly affect the properties of low-dimensional materials, such asgraphene. By combining in situ, in operando, reflection high energy electrondiffraction experiments with first-principles calculations, we show that largestrains, above 2%, are present in graphene during its growth by chemical vapordeposition on Ir(111) and when it is subjected to oxygen etching and ionbombardment. Our results unravel the microscopic relationship between pointdefects and strains in epitaxial graphene and suggest new avenues for graphenenanostructuring and engineering its properties through introduction of defectsand intercalation of atoms and molecules between graphene and its metalsubstrate.

Strains Induced by Point Defects in Graphene on a Metal