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We perform polarization-resolved Raman spectroscopy on graphene in magneticfields up to 45T. This reveals a filling-factor-dependent, multi-componentanticrossing structure of the Raman G peak, resulting from magnetophononresonances between magnetoexcitons and E$_{2g}$ phonons. This is explained witha model of Raman scattering taking into account the effects of spatiallyinhomogeneous carrier densities and strain. Random fluctuations ofstrain-induced pseudo-magnetic fields lead to increased scattering intensityinside the anti-crossing gap, consistent with the experiment.

Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy