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We demonstrate a link between the growth process, the stoichiometry of LaAlO(3), and the interfacial electrical properties of LaAlO(3)/SrTiO(3) heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10(-3) Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.

physical review letters

Effect of Growth Induced (Non)Stoichiometry on Interfacial Conductance in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>LaAlO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>

Effect of Growth Induced (Non)Stoichiometry on Interfacial Conductance inLaAlO3/SrTiO3