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The nontrivial electronic topology of a topological insulator is thus farknown to display signatures in a robust metallic state at the surface. Here, weestablish vibrational anomalies in Raman spectra of the bulk that signifychanges in electronic topology: an E2 g phonon softens unusually and itslinewidth exhibits an asymmetric peak at the pressure induced electronictopological transition (ETT) in Sb2Se3 crystal. Our first-principlescalculations confirm the electronic transition from band to topologicalinsulating state with reversal of parity of electronic bands passing through ametallic state at the ETT, but do not capture the phonon anomalies whichinvolve breakdown of adiabatic approximation due to strongly coupled dynamicsof phonons and electrons. Treating this within a four-band model of topologicalinsulators, we elucidate how nonadiabatic renormalization of phononsconstitutes readily measurable bulk signatures of an ETT, which will facilitateefforts to develop topological insulators by modifying a band insulator.

Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb2Se3