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Owing to its two dimensional electronic structure, graphene exhibits manyunique properties. One of them is a wave vector and temperature dependentplasmon in the infrared range. Theory predicts that due to these plasmons,graphene can be used as a universal material to enhance nanoscale radiativeheat exchange for any dielectric substrate. Here we report on radiative heattransfer experiments between SiC and a SiO2 sphere which have non matchingphonon polariton frequencies, and thus only weakly exchange heat in near field.We observed that the heat flux contribution of graphene epitaxially grown onSiC dominates at short distances. The influence of plasmons on radiative heattransfer is further supported with measurements for doped silicon. Theseresults highlight graphenes strong potential in photonic nearfield and energyconversion devices.

Experimental observation of nanoscale radiative heat flow due to surface plasmons in graphene and doped silicon