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We report on the emergence of an Electronic Griffiths Phase (EGP) in thedoped semiconductor FeSb$_{2}$, predicted for disordered insulators with randomlocalized moments in the vicinity of a metal-insulator transition (MIT).Magnetic, transport, and thermodynamic measurements ofFe(Sb$_{1-x}$Te$_{x}$)$_{2}$ single crystals show signatures ofdisorder-induced non-Fermi liquid behavior and a Wilson ratio expected forstrong electronic correlations. The EGP states are found on the metallicboundary, between the insulating state ($x = 0$) and a long-range albeit weakmagnetic order ($x \geq 0.075$).

Electronic Griffiths Phase in the Te - Doped Semiconductor FeSb$_{2}$