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As-grown topological insulators (TIs) are typically heavily-doped $n$-typecrystals. Compensation by acceptors is used to move the Fermi level to themiddle of the band gap, but even then TIs have a frustratingly small bulkresistivity. We show that this small resistivity is the result of band bendingby poorly screened fluctuations in the random Coulomb potential. Usingnumerical simulations of a completely compensated TI, we find that the bulkresistivity has an activation energy of just 0.15 times the band gap, in goodagreement with experimental data. At lower temperatures activated transportcrosses over to variable range hopping with a relatively large localizationlength.

Why is the bulk resistivity of topological insulators so small?