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The electrical conductance of molecular beam epitaxial Bi on BaF2(111) wasmeasured as a function of both film thickness (4-540 nm) and temperature (5-300K). Unlike bulk Bi as a prototype semimetal, the Bi thin films up to 90 nm arefound to be insulating in the interiors but metallic on the surfaces. Thisresult has not only resolved unambiguously the long controversy about theexistence of semimetal-semiconductor transition in Bi thin film but alsoprovided a straightforward interpretation for the long-puzzled temperaturedependence of the resistivity of Bi thin films, which in turn might suggestsome potential applications in spintronics.

Bi(111) thin film with insulating interior but metallic surfaces