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The massless Dirac fermions residing on the surface of three-dimensionaltopological insulators are protected from backscattering and cannot belocalized by disorder, but such protection can be lifted in ultrathin filmswhen the three-dimensionality is lost. By measuring the Shubnikov-de Haasoscillations in a series of high-quality Bi2Se3 thin films, we revealed asystematic evolution of the surface conductance as a function of thickness andfound a striking manifestation of the topological protection: The metallicsurface transport abruptly diminishes below the critical thickness of ~6 nm, atwhich an energy gap opens in the surface state and the Dirac fermions becomemassive. At the same time, the weak antilocalization behavior is found toweaken in the gapped phase due to the loss of \pi Berry phase.

Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films