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We demonstrate optical orientation in Ge/SiGe quantum wells and study theirspin properties. The ultrafast electron transfer from the center of theBrillouin zone to its edge allows us to achieve high spin-polarizationefficiencies and to resolve the spin dynamics of holes and electrons. Thecircular polarization degree of the direct-gap photoluminescence exceeds thetheoretical bulk limit, yielding ~37% and ~85% for transitions with heavy andlight holes states, respectively. The spin lifetime of holes at the top of thevalence band is found to be ~0.5 ps and it is governed by transitions betweenheavy and light hole states. Electrons at the bottom of the conduction band, onthe other hand, have a spin lifetime that exceeds 5 ns below 150 K. Theoreticalanalysis of the electrons spin relaxation indicates that phonon-inducedintervalley scattering dictates the spin lifetime.

Optical spin injection and spin lifetime in Ge heterostructures