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Using angle resolved photoemission spectroscopy we studied the evolution ofthe surface electronic structure of the topological insulator$\text{Bi}_2\text{Se}_3$ as a function of water vapor exposure. We find that asurface reaction with water induces a band bending shifting the Dirac pointdeep into the occupied states and creating quantum well states with a strongRashba-type splitting. The surface is thus not chemically inert, but thetopological state remains protected. The band bending is traced back toSe-abstraction leaving positively charged vacancies at the surface. Due to thepresence of water vapor, a similar effect takes place when$\text{Bi}_2\text{Se}_3$ crystals are left in vacuum or cleaved in air, whichlikely explains the aging effect observed in the $\text{Bi}_2\text{Se}_3$ bandstructure.

Reactive chemical doping of the $Bi_2 Se_3$ topological insulator