English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We investigate the transverse electric field ($E$) dependence of the $\nu$=0quantum Hall state (QHS) in dual-gated graphene bilayers in high magneticfields. The longitudinal resistivity ($\rho_{xx}$) measured at $\nu$=0 shows aninsulating behavior which is strongest in the vicinity of $E$=0, and at large$E$-fields. At a fixed perpendicular magnetic field ($B$), the $\nu$=0 QHSundergoes a transition as a function of $E$, marked by a minimum,temperature-independent $\rho_{xx}$. This observation is explained by atransition from a spin polarized $\nu$=0 QHS at small $E$-fields, to a valley(layer) polarized $\nu$=0 QHS at large $E$-fields. The $E$-field value at whichthe transition occurs has a linear dependence on $B$

Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at $\nu=0$ in High Magnetic Fields