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We report on a novel approach to determine the relationship between the corrugation and the thermal\udstability of epitaxial graphene grown on a strongly interacting substrate. According to our density\udfunctional theory calculations, the C single layer grown on Re(0001) is strongly corrugated, with a\udbuckling of 1.6 Angstrom, yielding a simulated C 1s core level spectrum which is in excellent agreement with the\udexperimental one. We found that corrugation is closely knit with the thermal stability of the C network:\udC-C bond breaking is favored in the strongly buckled regions of the moire´ cell, though it requires the\udpresence of diffusing graphene layer vacancies

Thermal Stability of Corrugated Epitaxial Graphene Grown on Re(0001)