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In addition to Anderson and Mott localization, intrinsic phase separation haslong been advocated as the third fundamental mechanism controlling thedoping-driven metal-insulator transitions. In electronic system, where chargeneutrality precludes global phase separation, it may lead to variousinhomogeneous states and dramaticahttp://arxiv.org/submit/215787/metadata arXivSubmission metadatally affect transport. Here we theoretically predict theprecise experimental signatures of such phase-separation-driven metal-insulatortransitions. We show that anomalous transport is expected in an intermediateregime around the transition, displaying very strong temperature and magneticfield dependence, but very weak density dependence. Our predictions findstriking agreement with recent experiments on Mn-doped CdTe quantum wells, asystem where we identify the microscopic origin for intrinsic phase separation.

Fingerprints of intrinsic phase separation: magnetically doped two-dimensional electron gas