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We report transport studies on a three dimensional, 70 nm thick HgTe layer,which is strained by epitaxial growth on a CdTe substrate. The strain induces aband gap in the otherwise semi-metallic HgTe, which thus becomes a threedimensional topological insulator. Contributions from residual bulk carriers tothe transport properties of the gapped HgTe layer are negligible at mKtemperatures. As a result, the sample exhibits a quantized Hall effect thatresults from the 2D single cone Dirac-like topological surface states.

Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe