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Based on scanning tunneling microscopy and first-principles theoreticalstudies, we characterize the precise atomic structure of a topological solitonin In chains grown on Si(111) surfaces. Variable-temperature measurements ofthe soliton population allow us to determine the soliton formation energy to be~60 meV, smaller than one half of the band gap of ~200 meV. Once created, thesesolitons have very low mobility, even though the activation energy is onlyabout 20 meV; the sluggish nature is attributed to the exceptionally lowattempt frequency for soliton migration. We further demonstrate local electricfield-enhanced soliton dynamics.

Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces