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We report on the temperature dependent electron transport in graphene atdifferent carrier densities $n$. Employing an electrolytic gate, we demonstratethat $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons andholes. The measured sample resistivity $\rho$ increases linearly withtemperature $T$ in the high temperature limit, indicating that aquasi-classical phonon distribution is responsible for the electron scattering.As $T$ decreases, the resistivity decreases more rapidly following $\rho (T)\sim T^{4}$. This low temperature behavior can be described by aBloch-Gr\"{u}neisen model taking into account the quantum distribution of the2-dimensional acoustic phonons in graphene. We map out the density dependenceof the characteristic temperature $\Theta_{BG}$ defining the cross-over betweenthe two distinct regimes, and show, that for all $n$, $\rho(T)$ scales as auniversal function of the normalized temperature $T/\Theta_{BG}$.

Controlling electron-phonon interactions in graphene at ultra high carrier densities