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We report on a systematic study of optical properties of (Ga,Mn)As epilayersspanning the wide range of accessible substitutional Mn_Ga dopings. The growthand post-growth annealing procedures were optimized for each nominal Mn dopingin order to obtain films which are as close as possible to uniformuncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in themid-infrared absorption spectra whose position exhibits a prevailing blue-shiftfor increasing Mn-doping. In the visible range, a peak in the magnetic circulardichroism blue shifts with increasing Mn-doping. These observed trends confirmthat disorder-broadened valence band states provide a better one-particlerepresentation for the electronic structure of high-doped (Ga,Mn)As withmetallic conduction than an energy spectrum assuming the Fermi level pinned ina narrow impurity band.

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As