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We have theoretically investigated a generation of entangled photons frombiexcitons in a semiconductor film with thickness in nano-to-bulk crossoverregime. In contrast to the cases of quantum dots and bulk materials, we canhighly control the generated state of entangled photons by the design ofpeculiar energy structure of exciton-photon coupled modes in the thicknessrange between nanometers and micrometers. Owing to the enhancement of radiativedecay rate of excitons at this thickness range, the statistical accuracy ofgenerated photon pairs can be increased beyond the trade-off problem with thesignal intensity. Implementing an optical cavity structure, the generationefficiency can be enhanced with keeping the high statistical accuracy.

Entangled-photon generation in nano-to-bulk crossover regime